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MIL-PRF-19500-193 Semiconductor Device, Diode, Silicon, Rectifier Types 1N457, 1N458, And 1N459, JanThis specification covers the performance requirements for silicon diode rectifiers. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9


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MIL-PRF-19500/193F
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
ZΘJX
Thermal impedance
3101
See 4.2.2. Not required for
end-point electricals.
VF1
Forward voltage
4011
1.0
V dc
1N457
IF = 100 mA, tp = 8.5 ms, max.
1N458
duty cycle 2 percent, (pulsed,
1N459
se 4.4.2)
IR1
Reverse current
4016
DC method
VR = 60 V
1N457
25
nA dc
VR = 125 V
1N458
25
nA dc
VR = 175 V
1N459
25
nA dc
IR2
Reverse current
4016
DC method
µA dc
VR = 70 V dc
1N457
1
µA dc
VR = 150 V dc
1N458
1
µA dc
VR = 200 V dc
1N459
1
Subgroup 3
TA = +150°C
High temperature
operation
IR3
Reverse current
4016
DC method
µA dc
VR = 60 V dc
1N457
5
µA dc
VR = 125 V dc
5
1N458
µA dc
VR = 175 V dc
1N459
5
TA = -55°C
Low temperature
operation
IF = 100mA dc pulsed
VF2
4011
1.2
V dc
Forward voltage
Subgroups 4, 5, and 6
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
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