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MIL-PRF-19500-383 Semiconductor Device, Diode, Silicon, Voltage-Variable Capacitor Types 1N5139A Through 1N5148A Jan, Jantx And JantxvThis specification covers the performance requirements for a silicon, voltage-variable-capacitor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/383B
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits 2/
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
IR = 10 µA dc
BV
65
V dc
Breakdown voltage
4021
20
nA dc
Reverse current
4016
VR = 55 V dc; dc method
IR
VR = 4 V dc; f = 1 MHz
Capacitance 3/
4001
C
Column
Column
pF
3
4
Subgroup 3
IR
µA dc
VR = 55 V dc; dc method;
20
Reverse current
4016
TA = 150°C
Subgroup 4
From VR = 4 V dc to VR = 60 V dc;
Column
Capacitance ratio
4001
5
operation
f = 1 MHz
Q
Column
VR = 4 V dc; f = 50 MHz
Quality factor
4036
6
1/ For sampling plans, see MIL-PRF-19500.
2/ Column references are to table II herein.
3/ End point only.
6



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