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MIL-PRF-19500-383 Semiconductor Device, Diode, Silicon, Voltage-Variable Capacitor Types 1N5139A Through 1N5148A Jan, Jantx And JantxvThis specification covers the performance requirements for a silicon, voltage-variable-capacitor diode. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9


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MIL-PRF-19500/383B
TABLE II. Test ratings.
Col 1
Col 2
Col 3
Col 4
Col 5
Col 6
Type
Capacitance
Capacitance ratio
Q
(See 1.1)
From VR = 4 V dc
VR = 4 V dc
VR = 4 V dc
f = 50 MHz
to VR = 60 V dc
Nom
Min
Max
Min
Min
pF
pF
pF
1N5139A
6.8
6.46
7.14
2.7
350
1N5140A
10.0
9.50
10.50
2.8
300
1N5141A
12.0
11.40
12.60
2.8
300
1N5142A
15.0
14.30
15.70
2.8
250
1N5143A
18.0
17.10
18.90
2.8
250
1N5144A
22.0
20.90
23.10
3.2
200
1N5145A
27.0
25.70
28.30
3.2
200
1N5146A
33.0
31.40
34.60
3.2
200
1N5147A
39.0
37.10
40.90
3.2
200
1N5148A
47.0
44.70
49.30
3.2
200
7



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