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MIL-PRF-19500-116 Semiconductor Device, Diode, Silicon, Switching, Types 1N4148-1, 1N4148Ur-1, 1N4148Ub, 1N4148Ubca, 1N4148Ubcc, 1N4148Ubccc, 1N4148Ubd, 1N4148Ubcd, 1N4148Ub2, 1N4148Ub2R, 1N914, 1N914Ur, 1N4531, And 1N4531Ur, Jan, Jantx, Jantxv, Janhc, And JankcThis specification covers the performance requirements for switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/116S
TABLE I. Group A inspection.
MIL-STD-750
Limit
Inspection 1/ 2/ 3/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
ZΘJX
Thermal impedance
3101
See 4.3.3
IF = 10 mA dc (pulsed, see 4.5.2)
VF1
Forward voltage
4011
0.8
V dc
IR = 100 µA dc
VBR1
Breakdown voltage
4021
100
V dc
DC method, VR = 20 V dc
IR1
Reverse current
4016
25
nA dc
DC method, VR = 75 V dc
IR2
Reverse current
4016
500
nA dc
Forward voltage
IF = 50 mA dc (pulsed, see 4.5.2)
VF2
1N914
4011
1.2
V dc
IF = 100 mA dc (pulsed, see 4.5.2)
1N4148-1, 1N4531
1.2
V dc
Subgroup 3
TA = +150°C
High temperature operation:
µA dc
DC method, VR = 20 V dc
IR3
Reverse current
4016
35
µA dc
DC method, VR = 75 V dc
IR4
Reverse current
4016
75
IF = 10 mA dc (pulsed, see 4.5.2)
VF3
Forward voltage
4011
0.8
V dc
TA = -55°C
Low temperature operation:
VF4
Forward voltage
4011
IF = 50 mA dc (pulsed, see 4.5.2)
1N914
1.3
V dc
IF = 100 mA dc (pulsed, see 4.5.2)
1N4148-1, 1N4531
1.3
V dc
Subgroup 4
VR = 0 V dc, f = 1 MHz,
C1
Capacitance
4001
4.0
pF
Vsig = 50 mVp-p maximum
VR = 1.5 V dc, f = 1 MHz,
C2
Capacitance
4001
2.8
pF
Vsig = 50 mVp-p maximum
See footnotes at end of table.
14



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