MIL-PRF-19500-246 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N3289, 1N3291, 1N3293, 1N3294, 1N3295, And R Types, Jan, Jantx And JantxvThis specification covers the performance requirements for silicon power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/246K

* 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.4, 1.5, and table I.

* 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or re-qualification only.

In case qualification was awarded to a prior revision of the associated specification that did not request the performance

of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

the first inspection lot to this revision to maintain qualification.

4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with appendix E, table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screening (see appendix E,

Measurement

table E-IV of

JANTX and JANTXV levels

Method 2073 of MIL-STD-750 may be used in lieu of method 2074 for compression

bonded devices only.

Thermal impedance (see 4.3.1) and figure 2.

5,000 G; performed prior to installation of external lead.

Not applicable.

IRM1 and VFM of subgroup 2 of table I herein.

Method 1038, condition A; VRM = VRWM rated (see 1.4), TC = 150�C; f = 60 Hz.

Subgroup 2 of table I herein: ĆIRM1 = �0.5 mA (pk) or 100 percent of initial value,

whichever is greater. ĆVFM = �0.1 V (pk).

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 70 μs max. See table II, group E, subgroup 4 and figure 2 herein.