INCH-POUND
The documentation and process conversion
MIL-PRF-19500/279E
measures necessary to comply with this revision
26 January 2009
shall be completed by 26 April 2009.
SUPERSEDING
MIL-PRF-19500/279D
21 December 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, TYPES 1N3644,
1N3645, 1N3646, AND 1N3647, JAN AND JANTX
Inactive for new design after 7 June 1999. However,
it is still valid for use as of 24 March 2004.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for 0.1 ampere silicon rectifiers. Two levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figure 1 (axial).
1.3 Maximum ratings. Unless otherwise specified T = +25C.
A
Altitude
VRWM
VR
IO
IO
I(surge)
TJ
Type
TA = 100°C
at VR
&
TSTG
TA = 25C
V
V
mA
mA
A
°C
Ft.
1N3644
1,500
1,050
250
100
14
-65 to +175
40,000
1N3645
2,000
1,400
250
100
14
-65 to +175
40,000
1N3646
2,500
1,750
250
100
14
-65 to +175
40,000
1N3647
3,000
2,100
250
100
14
-65 to +175
40,000
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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