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MIL-PRF-19500-279 Semiconductor Device, Diode, Types 1N3644, 1N3645, 1N3646, And 1N3647 Jan And JantxThis specification covers the detail requirements for 0.1 ampere silicon rectifiers. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8


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MIL-PRF-19500/279E
* TABLE I. Group A inspection.
Unit
Symbol
Conditions
Lirnits
Inspection
Min
Max
Method
Conditions
Subgroup 1
Visual and mechanical
examination
2071
Subgroup 2
Forward voltage
4011
IF = 250mA
VF
5
V dc
Reverse current
4016
1N3644
VRWM = 1,500 V dc
IR
5
uA dc
1N3645
VRWM = 2,000 V dc
IR
5
uA dc
1N3646
VRWM = 2,500 V dc
IR
5
uA dc
1N3647
VRWM = 3,000 V dc
IR
5
uA dc
1N3644
IR = 50 uA
VBR
1,800
V dc
1N3645
VBR
2,400
V dc
1N3646
VBR
3,000
V dc
1N3647
VBR
3,600
V dc
Subgroup 3
TA = +100C;
High temperature
operation
IO = 100 mA dc
Reverse current
4046
average
1N3644
VR = 1,050 V ac
IRO
100
uA dc
1N3645
VR = 1,400 V ac
IRO
100
uA dc
1N3646
VR = 1,750 V ac
IRO
100
uA dc
1N3647
VR = 2,100 V ac
IRO
100
uA dc
7



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