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MIL-PRF-19500-296 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, Jan And UbThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/296F
TABLE I. Group A inspection.
Inspection 1/
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Bias condition C; IG = 1.0 µA dc;
Gate - source breakdown
3401
voltage
30
V dc
V(BR)GSS
VDS = 0.
Gate reverse current
3411
Bias condition C; VGS = 30 V dc;
30
nA dc
IGSS1
VDS = 0.
Gate reverse current
3411
Bias condition C; VGS = 15 V dc;
22.5
nA dc
IGSS2
VDS = 0.
Zero-gate-voltage drain
3413
Bias condition C; VDS = 5 V dc;
current
-2.0
-10.0
mA dc
IDDSS1
VGS = 0.
ID = 1 µA dc; VDS = 5 V dc
Gate to source
3403
0.75
6.0
V dc
VGS(off)
cutoff voltage
Subgroup 3
TA = +150°C
High-temperature operation:
Drain current
3413
-1.0
mA dc
Bias condition C, VGS = 0 V dc;
IDDSS2
VDS = 5
µA dc
Gate reverse current
3411
45
Bias condition C; VGS = 15 V dc;
IGSS3
VDS = 0.
TA = -55°C
Low-temperature operation:
Small-signal, common-
3455
VDS = 5 V dc; VGS = 0;
µmho
Yfs1
source, short-circuit, forward
9,375
f = 1 kHz.
transfer admittance
See footnote at end of table.
6



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