MIL-PRF-19500-296 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, Jan And UbThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/296F

TABLE I. Group A inspection - Continued.

Inspection 1/

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 4

Small-signal common-

3455

VDS = 5 V dc; VGS = 0;

�mho

Yfs2

source, short-circuit, forward

2,000

6,250

f = 1 kHz.

transfer admittance

Small-signal common-

3431

VDS = 5 V dc; VGS = 0;

Ciss

source, short-circuit, input

f = 1 MHz.

capacitance

Common-source spot noise

VDS = 5 V dc; VGS = 0;

figure

BW = 16 percent; RG = 1 Mohm;

egen = 1.82 mV; RL = 220 ohms;

f = 1 kHz; (see figure 3).

Subgroups 5, 6, and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.