MIL-PRF-19500-433 Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Type 2N4399 And 2N5745, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/433H

* TABLE II. Group E inspection (all quality levels) - for qualification and re-qualification only.

Sample

Inspection

MIL-STD-750

plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Condition G, 500 cycles

Hermetic seal

1071

Fine leak

Test conditions G or H

Gross leak

Test conditions C or D

Electrical measurements

See table I, subgroup 2.

Subgroup 2

45 devices

c=0

Test temperature = +125�C; T = 1,000 hrs, VCB = 80

Blocking life

1048

percent rated voltage (see 1.3).

Electrical measurements

See table I, subgroup 2.

Subgroup 4

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 6

3 devices

ESD

1020

Testing not required for class 3 listing. Testing is

required for nonsensitive listing to prove capability.

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B