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MIL-PRF-19500-433 Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Type 2N4399 And 2N5745, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/433H
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward-current
3076
VCE = 2 V dc; pulsed (see 4.5.1)
hFE2
transfer ratio
2N4399
IC = 15 A dc
15
60
2N5745
IC = 10 A dc
15
60
Forward-current
3076
VCE = 5 V dc; pulsed (see 4.5.1)
hFE3
transfer ratio
2N4399
5
IC = 30 A dc
2N5745
5
IC = 20 A dc
Subgroup 3
TA = +150°C
High-temperature
operation:
Collector to emitter
3041
Bias condition A; VBE = 1.5 V dc
ICEX2
cutoff current
2N4399
VCE = 60 V dc
10
mA dc
2N5745
VCE = 80 V dc
10
mA dc
TA = -55°C
Low-temperature
operation:
hFE4
3076
VCE = 2 V dc; pulsed (see 4.5.1)
Forward-current
transfer ratio
2N4399
IC = 15 A dc
7
2N5745
IC = 10 A dc
7
Subgroup 4
Test condition A, except test
3251
Pulse response
circuit and pulse requirement in
accordance with figure 2
µs dc
Pulse on time
See figure 2
ton
1.2
µs dc
Pulse off time
See figure 2
toff
2.5
See footnote at end of table.
9



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