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MIL-PRF-19500-433 Semiconductor Device, Transistor, Pnp, Silicon, High-Power, Type 2N4399 And 2N5745, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/433H
4.4.2.1 Group B inspection, table E-VIA of MIL-PRF-19500.
Method
Conditions
Subgroup
*
B4
1037
VCB = 20 V dc; PT = 5 W at TA = room ambient as defined in the general
requirements of 4.5 of MIL-STD-750; ton = toff = 3 minutes minimum for
2,000 cycles. No heat sink or forced-air cooling on devices shall be
permitted.
VCB = 20 V dc; TA = +125°C ± 25°C for 96 hours; PT = 5 W at TA = +125°C
B5
1027
or adjusted as required by the chosen TA to give an average lot TJ = +275°C.
4.4.2.2 Group B inspection, table E-VIB of MIL-PRF-19500.
Subgroup
Method
Conditions
B3
1037
VCB = 20 V dc; adjust device current or power between cycles to achieve
a minimum ĆTJ of +100°C; ton = toff = 3 minutes minimum for 2,000 cycles.
No heat sink or forced-air cooling on the devices shall be permitted.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
Method
Conditions
Subgroup
C2
2036
Test condition A, weight = 10 lbs, t = 15 seconds.
*
C5
3131
See 4.3.2, RθJC = 0.875.
C6
1037
VCB = 20 V dc; Adjust device current or power between cycles to achieve a
minimum ĆTJ of +100°C; ton = toff = 3 minutes minimum for 6,000 cycles.
No heat sink or forced-air cooling on device shall be permitted.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
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