The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
MIL-PRF-19500/464G
completed by 22 August 2009.
22 May 2009
SUPERSEDING
MIL-PRF-19500/464F
27 August 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N5685 AND 2N5686, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, similar to TO-3.
1.3 Maximum ratings. TC = +25°C, unless otherwise specified.
PT (1)
Type
PT (1)
TC =
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
RθJC
TC = +25°C
+100°C
°C
°C/W
W
W
V dc
V dc
V dc
A dc
A dc
2N5685
300
171
60
60
5
15
50
-55 to +200
.584
2N5686
300
171
80
80
5
15
50
-55 to +200
.584
(1) Between TC = +25°C and TC = +200°C linear derating factor 1.715 W/°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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