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MIL-PRF-19500-464 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5685 And 2N5686, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/464G
*  4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with the table I, subgroup 2 herein.
Method
Conditions
Subgroup
C2
2036
Test condition A, weight = 10 pounds, t = 15 s.
See 4.3.2, RθJC = .584°C/W.
C5
3131
6,000 cycles, VCE ≥ 10 V dc, ĆTJ between cycles ≥ +100°C, adjust power or
C6
1037
current to achieve a ĆTJ = +100°C.
*  4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall
be in accordance with the table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
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