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MIL-PRF-19500-102 Semiconductor Device, Transistors, Npn, Silicon, High Power Types 2N1016B, 2N1016C, And 2N1016D JanThis specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for each device type.

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MIL-PRF-19500/102B
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Conformance inspection (see 4.3 and table I).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with
method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
4.3 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.3.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIB (JAN) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall
be in accordance with table I, subgroup 2 herein.
Subgroup
Method
Condition
B3
1027
VCB = 30 V dc, IC = 2.39 A dc
4.3.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
Subgroup
Method
Condition
Test condition A; weight = 5 pounds ±1 ounce, application time = 15 s
C2
2036
Test condition D2; torque = 40 inch-pound; application time = 15 s.
Test condition D1; torque = 5 in-oz; application time = 15 s; tubulated leads only.
RθJC (see 1.3).
C5
3151
1,000 hours, VCB = 30 V dc, power and ambient temperature shall be applied to
C6
1026
the device to achieve TJ = +150°C minimum, and minimum power dissipation of
75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. The sample size may
be increased and the test time decreased as long as the devices are stressed for
a total of 45,000 device hours minimum, and the actual time of test is at least 340
hours.
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