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MIL-PRF-19500-102 Semiconductor Device, Transistors, Npn, Silicon, High Power Types 2N1016B, 2N1016C, And 2N1016D JanThis specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for each device type.

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MIL-PRF-19500/102B
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
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