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MIL-PRF-19500-187 Semiconductor Diode, Silicon, High-Voltage Type Jan1N2361This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7


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MIL-PRF-19500/187B
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limits
Symbol
Unit
Method
Conditions
Min
Max
Subgroup I
2071
Visual and mechanical
inspection
Subgroup 2
Forward voltage
4011
2
V dc
IF = 400 mA
VF1
µA dc
Reverse current leakage
4016
5
VR = 2,000 V dc
IR1
µA dc
Reverse current leakage
4016
100
Vr = 2,300 V
IR2
Subgroup 3
TA = +125°C
High temperature
operation:
µA dc
Reverse current leakage
4016
200
IO = 50 mA dc; VR =
IR3
1,400 V dc
TA = -65°C
Low temperature
operation:
µA dc
Peak reverse voltage
4016
100
Vr = 2,000 V
IR4
Forward voltage
4011
2.5
V dc
IF = 400 mA
VF2
Subgroups 4, 5, 6, and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
5



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