MIL-PRF-19500-187 Semiconductor Diode, Silicon, High-Voltage Type Jan1N2361This specification covers the performance requirements for silicon semiconductor diodes for use in high-voltage, rectifier circuits, and having the following particular characteristics. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/187B

* TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

MIL-STD-750

Qualification

and

large lot quality

Method

Conditions

conformance

inspection

Subgroup 1

12 devices

c=0

-55�C to +150�C, 500 cycles

Temperature cycling

1051

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

Table I, subgroup 2 herein.

Subgroup 2

12 devices

c=0

VR = 1,400 V dc, IO = 50 mA dc, TA = +125�C min.

Steady-state operation life

1026

f = 60 Hz

Electrical measurements

Table I, subgroup 2 herein.

Subgroup 4

Sample size

N/A

Thermal impedance curves

Each supplier shall submit their qual-lot average

and design maximum thermal impedance curves

to the qualifying activity. In addition, the optimal

test conditions and thermal impedance limit shall

be provided to the qualifying activity in the

qualification report

Subgroup 5

15 devices

c=0

Barometric pressure

1001

See 1.3

Subgroup 6

3 devices

ESD

1020