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MIL-PRF-19500-211 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177 And R Types Jan, Jantx, And JantxvThis specification covers the detail requirements for silicon power rectifier. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

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MIL-PRF-19500/211D
4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screening (see table E-IV
Measurement
JANTX and JANTXV levels
1
Method 2073 of MIL-STD-750 may be used in lieu of method 2074 for
compression bonded devices only.
Thermal impedance (see 4.3.1).
3c
4
2,500 G; performed prior to installation of external lead.
10
Not applicable.
11
IRM1 and VFM of subgroup 2 of table I herein.
12
Method 1038 of MIL-STD-750, condition A; VRM = VRWM rated (see 1.4),
TC = 150°C; f = 60 Hz.
Subgroup 2 of table I herein: ĆIRM1 = ±0.5 mA (pk) or 100 percent of
13
initial value, whichever is greater. ĆVFM = ±0.1 V (pk).
4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500,
table I herein, and as specified herein. Electrical measurements (end-points) and delta requirements shall be in
accordance with the applicable steps of table II herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with applicable steps of table II herein.
4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500).
Subgroup
Method
Condition
Blocking life. TC = 185°C, -10, +0; VRWM = VRM (see 1.4); IO = 0, half sine wave,
B3
1048
or
f = 60 Hz.
See 4.5.1, ĆTJ = +85°C minimum; IO ≥ 75 A, 2,000 cycles.
B3
1037
RθJC = 0.20°C/W.
B5
4081
TA = +200°C.
B6
1032
5



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