MIL-PRF-19500-262 Semiconductor Device, Transistor, Npn, Silicon, High-Power Types 2N1722 And 2N1724, Jan And JantxThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/262G

TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles.

Temperature cycling

(air to air)

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 and 4.5.3 herein.

Electrical measurements

45 devices

Subgroup 2

c=0

VCB ≥ 10 V dc , 6,000 cycles.

1037

Intermittent life

Electrical measurements

See table I, subgroup 2 and 4.5.3 herein.

Subgroup 4

Thermal impedance curves

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Subgroup 5

Not applicable

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.