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MIL-PRF-19500-262 Semiconductor Device, Transistor, Npn, Silicon, High-Power Types 2N1722 And 2N1724, Jan And JantxThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/262G
4.4.2.1 Group B inspection, table E-VIB (JAN and JANTX) of MIL-PRF-19500.
Subgroup
Method
Condition
VCB ≥ 10 V dc, 2,000 cycles.
B3
1037
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
Subgroup
Method
Condition
C2
2036
Test condition A; weight = 10 pounds; time = 15 s.
C2
2036
Test condition D1; torque = 6 inch-ounce; time =15 s (2N1724
only).
C2
2036
Stud torque (2N1724 only), test condition D2; torque = 15 inch-
pound; time = 15 s.
C5
3131
See 4.3.2, RθJC = 1.5°C/W.
VCB ≥ 100 V dc, 6,000 cycles.
C6
1037
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the
applicable steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted at a case
temperature (TC) of +25°C.
4.5.3 Delta requirements. Delta requirements shall be as specified below: (1) (2) (3) (4)
Steps
Inspection
Symbol
Limits
Unit
Method
Conditions
Min
Max
ĆICES1
1.
Collector to emitter
3041
100 percent of initial
Bias condition C, VCE = 60 V dc
cutoff current
value or 50 µA,
whichever is greater.
±20 percent change
ĆhFE2
2.
Forward - current
3076
IC = 2 A dc
transfer ratio
from initial reading
VCE = 5 V dc, pulsed (see 4.5.1)
(1) The delta measurements for table E-VIB (JAN and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see 4.5.3 herein, steps 1 and 2.
b. Subgroup 4, see 4.5.3 herein, steps 1 and 2.
(2) The delta measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, see 4.5.3 herein,
steps 1 and 2.
(3) Devices which exceed the table I limits for this test shall not be accepted.
(4) Group E, table II herein, subgroups 1 and 2, see 4.5.3 herein, steps 1 and 2.
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