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MIL-PRF-19500-295 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, Jan And UbThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/295F

TABLE II. Groups B, C, and E electrical measurements. 1/ 2/ 3/

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

Min

Max

Gate reverse current

3411

nA dc

Bias condition C; VGS = 15 V dc;

IGSS1

VDS = 0

Gate reverse current

3411

nA dc

Bias condition C; VGS = 15 V dc;

IGSS2

VDS = 0

Drain current

3413

-1.0

-5.0

mA dc

Bias condition C; VGS = 5 V dc;

IDSS1

VDS = 0

Drain current

3413

-0.90

-5.5

mA dc

Bias condition C; VGS = 5 V dc;

IDSS2

VDS = 0

�mho

Yfs1

Small-signal, common-

3455

1,000

4,500

VDS = 5 V dc; VGS = 0;

source short-circuit,

f = 1 kHz

forward transfer

admittance

�mho

Yfs3

Small-signal, common-

3455

900

4,950

VDS = 5 V dc; VGS = 0;

source short-circuit,

f = 1 kHz

forward transfer

admittance

1/ The electrical measurements for table E-VIB (JAN) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1, 3, and 5.

b. Subgroups 3 and 6, see table II herein, steps 2, 4, and 6.

2/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows:

a. Subgroups 2 and 3, see table II herein, steps 1, 3, and 5.

b. Subgroup 6, see table II herein, steps 2, 4, and 6.

3/ The electrical measurements for table E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see table II

herein, all steps.