MIL-PRF-19500-295 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, Jan And UbThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/295F

NOTE: Or equivalents

Procedure:

The voltage and current shall be applied to the terminals, and the

noise figure shall then be measured as follows:

1. Connect egen to the input of the device under test.

2. Adjust gain of system to give 0 dB reading on a convenient

scale of the Ballantine voltmeter or equivalent.

3. Switch the device input to ground.

4. Increase system gain by 60 dB.

5. Read noise figure directly in dB's on Ballintine scale or equivalent.

FIGURE 3. Common-source spot noise figure test circuit.