MIL-PRF-19500-295 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, Jan And UbThis specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/295F

* TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

Qualification and

large lot quality

Method

Conditions

conformance

inspection

Subgroup 1

45 devices

c=0

-55�C to +150�C, 500 cycles

Temperature cycling

1051

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table II, all steps

Subgroup 2 1/

45 devices

c=0

VCB ≥ 10 V dc, TA = +150�C, VDS = 0; VGS = 24 V dc.

Steady-state operating life

1026

Electrical measurements

See table II, all steps

Subgroups 4 and 5

Not applicable

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition A

1/ A separate sample for each test shall be pulled.