The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
MIL-PRF-19500/297H
completed by 9 February 2010.
9 November 2009
SUPERSEDING
MIL-PRF-19500/297G
25 July 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768,
1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R,
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon semiconductor power rectifier
diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-5).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Storage
Barometric
Type
Junction
VRM
IO (1)
If (surge)
VR
RθJC
temp.
pressure
temp.
TC = 150°C
at 1/120 s
(reduced)
TC = 150°C
TC
TJ
°C/W max
°C
°C
V dc
V (pk)
A dc
A
mmHg
-65
-65
100
100
35
500
8
1N1184, R
0.8
200
200
35
500
8
1N1186, R
0.8
to
to
400
400
35
500
8
1N1188, R
0.8
600
600
35
500
16
1N1190, R
0.8
+175
+175
800
800
35
500
30
1N3766, R
0.8
1,000
1,000
35
500
54
1N3768, R
0.8
(1) Derate linearly 1.4 A dc/°C between TC = 150°C to TC = 175°C.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.daps.dla.mil .
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