MIL-PRF-19500-297 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon semiconductor power rectifier diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/297H

TABLE III. Groups B, C, and E delta electrical end-point measurements. 1/ 2/ 3/

MIL-STD-750

Limits

Step

Inspection

Symbol

Unit

Method

Conditions

Min

Max

ĆVF2

Forward voltage

4011

�50 mV dc maximum

IF =110 a(pk) dc tp < 8.3 ms,

change from previous

duty cycle < 2 percent pulse.

measured value.

ĆIR1 4/

Reverse current

4016

DC method, VR = Rated VR(dc)

�100 percent of initial value

or �5.0 �A, (whichever is

(see 1.3)

greater) from previous

measured value.

1/ The delta electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table III herein, step 1.

b. Subgroup 3 see table III herein, steps 1 and 2.

2/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows:

a. Subgroup 2 see table III herein, step 1 (JAN, JANTX and JANTXV).

b. Subgroup 6, see table III herein, steps 1 and 2 (JAN, JANTX and JANTXV).

3/ The delta electrical measurements for table IX of MIL-PRF-19500 are as follows:

a. Subgroup 1 see table III herein, step 1.

b. Subgroup 2, see table III herein, step 2.

4/ Devices which exceed the table I limits for this test shall be rejected.