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MIL-PRF-19500-297 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon semiconductor power rectifier diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500.

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MIL-PRF-19500/297H
TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
1.4
V dc
VF2
tp < 8.3 ms, duty cycle < 2 percent
Forward voltage
4011
pulse IF = 110 a(pk)
µA dc
Reverse current
4016
10
DC method VR = rated VR
IR1
(see 1.3)
°C/W
Thermal impedance
3101
See 4.3.2
ZθJX
Subgroup 3
TC = 150°C
High temperature
operation:
Reverse current
4016
1
mA dc
DC method VR = rated VR(pk)
IR2
(see 1.3)
Subgroups 4 and 5
Not applicable
Subgroup 6 2/
IF = If(surge); tp = 800 µs
Forward voltage
2.5
4011
V dc
VF1
Forward voltage
2.3
V dc
IF = If(surge); tp = 8.3 ms
VF1
4011
Subgroup 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
2/ VF1 shall be performed with either tp = 800 µs or tp = 8.3 ms.
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