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MIL-PRF-19500-375 Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821Ub, 2N3822, 2N3822Ub, 2N3823, And 2N3823Ub, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/375J
TABLE I. Group A inspection - Continued.
Inspection 1/
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 4 - Continued
Small-signal common-
VDS = 15 V dc; VGS = 0;
gos
source, short-circuit, output
f = 200 MHz; (see 4.5.3)
conductance
µS
2N3823 and 2N3823UB
200
only
Common-source spot noise
VDS = 15 V dc; VGS = 0;
NF1
RG = 1 MΩ; (see 4.5.4)
figure
2N3821, 2N3821UB, and
f = 10 Hz
5.0
dB
2N3822, 2N3822UB only
All types
f = 1 kHz
2.5
dB
Common-source spot noise
VDS = 15 V dc; VGS = 0;
NF2
RG = 1 kΩ; f = 105 MHz;
figure
(see 4.5.5)
2N3823, 2N3823UB only
2.5
dB
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
10



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