MIL-PRF-19500-375 Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821Ub, 2N3822, 2N3822Ub, 2N3823, And 2N3823Ub, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/375J

TABLE I. Group A inspection - Continued.

Inspection 1/

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 4 - Continued

Small-signal common-

VDS = 15 V dc; VGS = 0;

gos

source, short-circuit, output

f = 200 MHz; (see 4.5.3)

conductance

�S

2N3823 and 2N3823UB

200

only

Common-source spot noise

VDS = 15 V dc; VGS = 0;

NF1

RG = 1 MΩ; (see 4.5.4)

figure

2N3821, 2N3821UB, and

f = 10 Hz

5.0

2N3822, 2N3822UB only

All types

f = 1 kHz

2.5

Common-source spot noise

VDS = 15 V dc; VGS = 0;

NF2

RG = 1 kΩ; f = 105 MHz;

figure

2N3823, 2N3823UB only

2.5

Subgroups 5, 6, and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.