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MIL-PRF-19500-375 Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821Ub, 2N3822, 2N3822Ub, 2N3823, And 2N3823Ub, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/375J
TABLE I. Group A inspection .
Inspection 1/
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Bias condition C; IG = 1.0 µA dc;
Gate-source breakdown voltage
3401
V(BR)GSSR
VDS = 0
2N3821, 2N3821UB
50
V dc
2N3822, 2N3822UB
50
V dc
2N3823, 2N3823UB
30
V dc
Gate reverse current
3411
Bias condition C;
IGSSR1
2N3821, 2N3821UB
0.1
nA dc
VGS = 30 V dc; VDS = 0
2N3822, 2N3822UB
0.1
nA dc
VGS = 30 V dc; VDS = 0
2N3823, 2N3823UB
0.5
nA dc
VGS = 20 V dc; VDS = 0
Zero-gate-voltage drain current
3413
Bias condition C; VDS = 15 V dc;
IDSS
VGS = 0; pulsed (see 4.5.1)
2N3821, 2N3821UB
0.5
2.5
mA dc
2N3822, 2N3822UB
2.0
10.0
mA dc
2N3823, 2N3823UB
4.0
20.0
mA dc
Gate-source voltage
3403
VDS = 15 V dc;
VGS
ID = 50 µA dc
2N3821, 2N3821UB
0.5
2.0
V dc
ID = 200 µA dc
2N3822, 2N3822UB
1.0
4.0
V dc
ID = 400 µA dc
2N3823, 2N3823UB
1.0
7.5
V dc
Gate-source cutoff voltage
3403
VDS = 15 V dc; ID = 0.5 nA dc
VGS(off)
2N3821, 2N3821UB
4.0
V dc
2N3822, 2N3822UB
6.0
V dc
2N3823, 2N3823UB
8.0
V dc
1010
Ω
Case insulation resistance
1016
Test condition A; (see 4.5.2.1)
RISO
Small-signal, common-source,
3455
VDS = 15 V dc; VGS = 0;
|yfs|1
short-circuit, forward
f = 1 kHz; pulsed (see 4.5.1)
transadmittance
µS
2N3821, 2N3821UB
1,500
4,500
µS
2N3822, 2N3822UB
3,000
6,500
µS
2N3823, 2N3823UB
3,500
6,500
Subgroup 3
TA = +150°C
High-temperature operation:
Gate reverse current
3411
Bias condition C;
IGSSR2
µA dc
2N3821, 2N3821UB
0.1
VGS = 30 V dc; VDS = 0
µA dc
2N3822, 2N3822UB
0.1
VGS = 30 V dc; VDS = 0
µA dc
2N3823, 2N3823UB
0.5
VGS = 20 V dc; VDS = 0
See footnote at end of table.
8



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