MIL-PRF-19500-375 Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821Ub, 2N3822, 2N3822Ub, 2N3823, And 2N3823Ub, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/375J

TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

Qualification

and

large lot quality

Method

Conditions

conformance

inspection

Subgroup 1

45 devices

c=0

-55�C to +150�C, 500 cycles

Temperature cycling

1051

Hermetic seal

1071

As applicable

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and table II, all steps

Subgroup 2 1/

45 devices

c=0

Steady-state operating life

1026

VDS = 0; 2N3821, 2N3821UB, 2N3822, and

2N3822UB: VGS = 40 V dc; 2N3823,

2N3823UB: VGS = 24 V dc; at TA = +225�C for

168 hours or TA = +200�C for 260 hours.

Electrical measurements

See table I, subgroup 2 and table II, all steps

Subgroups 4 and 5

Not applicable

Subgroup 7

45 devices

c=0

Reverse stability

1033

Condition A

1/ A separate sample for each test shall be pulled.