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MIL-PRF-19500-466 Semiconductor Device, Transistor, Pnp, Silicon, Power, Types 2N5683 And 2N5684, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/466C
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward-current
3076
VCE = 2 V dc, IC = 5 A dc,
hFE1
30
transfer ratio
pulsed (see 4.5.1)
Forward-current
3076
VCE = 2 V dc, IC = 25 A dc,
hFE2
15
60
transfer ratio
pulsed (see 4.5.1)
Forward - current
3076
VCE = 5 V dc, IC = 50 A dc,
hFE3
5
transfer ratio
pulsed (see 4.5.1)
Subgroup 3
TA = +150°C
High-temperature
operation
µA dc
Collector - emitter
3041
Bias condition A,
ICEX2
50
cutoff current
VBE = 1.5 V dc
2N5683
VCE = 60 V dc
2N5684
VCE = 80 V dc
TA = -55°C
Low-temperature
operation
Forward - current
3076
VCE = 2.0 V dc,
hFE4
7
transfer ratio
IC = 25 A dc,
pulsed (see 4.5.1)
Subgroup 4
Pulse response:
3251
Test condition A except
test circuit and pulse
requirements per
figures 2 and 3 herein.
µs
Turn - on time
VCC = 30 V dc,
ton
1.5
IC = 25 A dc, IB1 = 2.5 A dc
µs
Turn - off time
VCC = 30 V dc,
toff
3.0
IC = 25 A dc,
IB1 = IB2 = 2.5 A dc
µs
Storage time
VCC = 30 V dc,
ts
2.0
IC = 25 A dc,
IB1 = IB2 = 2.5 A dc
See footnotes at end of table.
8



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