The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 23 August 2011.
MIL-PRF-19500/508D
23 May 2011
SUPERSEDING
MIL-PRF-19500/508C
19 June 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,
TYPES 2N6437 AND 2N6438, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-204 similar to TO-3).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
PT (1)
VCBO
VCEO
VEBO
IC
IB
TOP and TSTG
RθJC
TC = +25°C
TC = +100°C
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
2N6437
200
112
120
100
6
25
10
-65 to +200
0.875 max
2N6438
200
112
140
120
6
25
10
-65 to +200
0.875 max
(1) Between TC = +25°C and TC = +200°C, linear derating factor (average) = 1.14 W/°C.
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C.
hFE1 (1)
hFE2 (1)
VCE(sat)2
VCE(sat)1
VBE(sat)1
Limits
Switching
IC = 10 A dc
VCE = 2 V dc
VCE = 2 V dc
IC = 25 A dc
IC = 10 A dc
ton
toff
IB = 1.0 A dc
IC = 25 A dc
IC = 10 A dc
IB = 2.5 A dc
IB = 1.0 A dc
µs
µs
V dc
V dc
V dc
12
30
Min
120
Max
1.8
1.0
1.8
0.5
1.25
(1) Pulsed, (see 4.5.1).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.daps.dla.mil/.
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