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MIL-PRF-19500-525 Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N6546, 2N6546T1, 2N6546T3, 2N6547, 2N6547T1, And 2N6547T3 Jan, Jantx, Jantxv6 And JanhcThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/525F
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIB of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2, herein.
4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500
Subgroup
Method
Conditions
For solder die attach: VCB ≥ 20 V dc, for 2,000 cycles, TA ≤ +35°C, adjust
B3
1037
power or current to achieve a minimum ĆTJ = +100°C.
For eutectic die attach: VCB ≥ 20 V dc; adjust PT to achieve TJ = +175°C
B3
1027
minimum, TA ≤ +35°C.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2, herein.
Subgroup
Method
Conditions
C2
2036
Test condition A; weight = 10 pounds (4.54 Kg); t = 15 seconds.
See 4.3.2, RθJC = 1.0°C/W for 2N6546, 2N6546T1, 2N6547 and 2N6547T1;
C5
3131
RθJC = 1.4°C/W for 2N6546T3 and 2N6547T3.
For solder die attach: VCB ≥ 20 V dc, for 6,000 cycles, TA ≤ +35°C, adjust
C6
1037
power or current to achieve a minimum ĆTJ = +100°C.
For eutectic die attach: VCB ≥ 20 V dc; adjust PT to achieve TJ = +175°C
C6
1026
minimum, TA ≤ +35°C.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
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