MIL-PRF-19500/525F
* 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurements
of MIL-PRF-19500)
JANTX, JANTXV levels
(1) 3c
Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2).
TA = +150°C; t = 48 hours min.
10
VCB = 200 V dc for 2N6546, 2N6546T1, 2N6546T3.
VCB = 300 V dc for 2N6547, 2N6547T1, 2N6547T3.
11
hFE2 ; ICEX1
12
See 4.3.1.
13
Subgroup 2 of table I herein.
ĆICEX1 = 100 percent of initial value or 2 µA dc, whichever is greater;
ĆhFE2 = ±25 percent of initial value.
17
For TO-254 packages: Method 1081 of MIL-STD-750 (see 4.3.4),
Endpoints: Subgroup 2 of table I herein.
(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in
screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = + 175°C minimum, VCB ≥ 20 V dc,
TA = +35°C maximum.
4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with
method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
4.3.3 Screening (JANHC). Screening of JANHC die shall be in accordance with MIL-PRF-19500, "Discrete
Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANHC level follows JANTX requirements.
*
4.3.4 Dielectric withstanding voltage.
a.
Magnitude of test voltage.....................................900 V dc.
b.
Duration of application of test voltage....................15 seconds (min).
c.
Points of application of test voltage........................All leads to case (bunch connection).
d.
Method of connection.........................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f.
Maximum leakage current....................................1.0 mA.
g.
Voltage ramp up time..................................................500 V/second.
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