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MIL-PRF-19500-525 Semiconductor Device, Transistor, Npn, Silicon, Power Types 2N6546, 2N6546T1, 2N6546T3, 2N6547, 2N6547T1, And 2N6547T3 Jan, Jantx, Jantxv6 And JanhcThis specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/525F
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 3
TA = +150°C
High temperature operation:
Collector to emitter cutoff
3041
Bias condition A;
ICEX2
30
mA dc
current
VBE = 1.5 V dc
2N6546, 2N6546T1, 2N6546T3
VCE = 600 V dc
2N6547, 2N6547T1, 2N6547T3
VCE = 850 V dc
µA dc
Collector to emitter cutoff
3041
Bias condition A;
ICEX3
450
current
VBE = 1.5 V dc;
VCE = 300 V dc
2N6546, 2N6546T1, 2N6546T3
VCE = 400 V dc
2N6547, 2N6547T1, 2N6547T3
TA = -55°C
Low temperature operation:
Forward-current
3076
VCE = 2.0 V dc; IC = 5 A
hFE4
4
transfer current
dc; pulsed (see 4.5.1)
Subgroup 4
Pulse response
3251
Test condition A except
test circuit and pulse
requirements in
accordance with figure 9
herein.
µs
Turn-on time
VCC = 250 V dc;
ton
1.0
IC = 10 A dc;
IB1 = IB2 = 2 A dc
µs
Turn-off time
VCC = 250 V dc;
toff
4.7
IC = 10 A dc;
IB1 = IB2 = 2 A dc
hfe
Magnitude of common
3306
VCE = 10 V dc;
6.0
30
emitter small-signal
IC = .5 A dc;
short-circuit forward-
f = 1 MHz
current transfer ratio
Output capacitance
3236
VCB = 10 V dc; IE = 0;
Cobo
500
pF
0.1 MHz ≤ f ≤ 1.0 MHz
(open circuit)
See footnotes at end of table.
12



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