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MIL-PRF-19500-594 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Low Leakage, Types 1N6664 Through 1N6666, And 1N6664R Through 1N6666R Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/594B
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and
2071
mechanical
examination
Subgroup 2
°C/W
Thermal impedance
2.5
3101
See 4.4.1
ZθJX
tp ≤ 400 µs, duty cycle ≤ 2 percent
Forward voltage
4011
pulse
VF1
1.0
V dc
IF = 6 A
VF2
1.5
V dc
IF = 12 A
Reverse current
4016
DC method; VR = rated VR
IR1
250
nA dc
leakage
(see 1.3)
IR = 1.0 µA dc
V(BR)1
Breakdown voltage
4021
100
1N6664, 1N6664R
V dc
150
1N6665, 1N6665R
V dc
200
1N6666, 1N6666R
V dc
Subgroup 3
TA = +150°C
High temperature
operation:
µA dc
Reverse current
4016
DC method; VR = rated VR
IR2
75
leakage
(see 1.3)
| IFM = 6 A, duty cycle ≤ 2 percent
Forward voltage
4011
VF3
0.95
V
(pulsed); tp ≤ 400 µs
TA = -55°C
Low temperature
operation:
IFM = 6 A, duty cycle ≤ 2 percent
Forward voltage
4011
VF4
1.1
V
(pulsed); tp ≤ 400 µs
IR = 1.0 µA dc
Breakdown voltage
4021
V(BR)2
1N6664,1N6664R
100
V dc
1N6665,1N6665R
150
V dc
1N6666,1N6666R
200
V dc
See footnote at end of table.
7



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