MIL-PRF-19500-594 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Low Leakage, Types 1N6664 Through 1N6666, And 1N6664R Through 1N6666R Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/594B

* TABLE II. Group E inspection (all quality levels) for qualification only.

Inspection

MIL-STD-750

Sampling plan

Method

Conditions

Subgroup 1

45 devices

c=0

20 cycles, except high temperature shall be 100�C and low

Thermal shock

1056

temperature shall be 0�C.

(liquid to liquid)

500 cycles, condition C. -65�C to +200�C.

Temperature

1051

cycling (air to air)

Hermetic seal

1071

Electrical

See table I, group A, subgroup 2 and table III,

measurement

steps 1 and 2.

Subgroup 2

22 devices

c=0

Test condition A, t = 1,000 hours, TC = +150�C,

Steady-state

1038

reverse bias

VR = 0.8 of rated VRWM (see 1.3).

Electrical

See table I, group A, subgroup 2 and table III, steps 1 and

measurement

Subgroup 3

Not applicable

Subgroup 4

Sample size

N/A

Thermal

See MIL-PRF-19500.

impedance

curves

See footnotes at end of table