MIL-PRF-19500/621D
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4 and tables I and II.).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the performance
of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to
maintain qualification.
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500,
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
3c (1)
Thermal impedance (see 4.3.2)
Thermal impedance (see 4.3.2)
9
ICES1 and hFE2
Not applicable
ICES1 and hFE2
Subgroup 2 of table herein;
11
ICES1 and hFE2; ĆICES1 = 100 percent of initial
value or 2 µA dc, whichever is greater. ĆhFE2 =
±20 percent of initial value.
12
See 4.3.1
See 4.3.1
Subgroup 2 of table I herein;
Subgroups 2 and 3 of table I herein;
ICES1 and hFE2; ĆICES1 = 100 percent of initial
13
ICES1 and hFE2; ĆICES1 = 100 percent of initial
value or 2 µA dc, whichever is greater. ĆhFE2 =
value or 2 µA dc, whichever is greater. ĆhFE2 =
±20 percent of initial value.
±20 percent of initial value.
For TO-254 packages: Method 1081 of MIL-
For TO-254 packages: Method 1081 of MIL-
17
STD-750 (see 4.3.3), Endpoints: Subgroup 2 of
STD-750 (see 4.3.3), Endpoints: Subgroup 2 of
*
table I herein.
table I herein.
(1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV does not need to be
repeated in screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
TJ = +175°C minimum, VCE = -10 to -30 V dc, TA = +30 ±5°C.
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