The documentation process conversion
INCH POUND
measures necessary to comply with this
revision shall be completed by 22 September 1997
MIL-PRF-19500/626A
22 June 1997
SUPERSEDING
MIL-S-19500/626
18 November 1994
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
ULTRAFAST, TYPES 1N6686, 1N6687, 1N6686US, AND 1N6687US,
JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, hyper fast power rectifier diodes. Three levels of
product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 and 2.
1.3 Maximum ratings.
| Types
| VRWM
| IO 1/
| trr
|
IFSM
| RθJL
| RθJE
| TSTG and TJ
|
|
|
|
|
| tp = 8.3 ms,
|
|
|
|
| TA = +25°C |
| TA = +25°C
|
|
| at L = 0.35
| 2/
|
|
|
|
|
|
|
|
|
|
|
°C/W
| °C/W
°C
|
| V dc
|
A dc
| ns
|
A (pk)
|
|
|
|
|
|
|
|
|
|
|
|
| 1N6686,1N6686US | 100
|
20
| 40
|
375
|
4
| 3.5
| -65 to +175
|
| 1N6687,1N6687US | 200
|
20
| 40
|
375
|
4
| 3.5
| -65 to +175
|
|
|
|
|
|
|
|
|
|
1/ Derate linearly at 267 mA/°C from +100°C to +175°C.
2/ -US suffix devices only.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
FSC 5961
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