INCH-POUND
MIL-S-19500/254B
21 March 2005
SUPERSEDING
MIL-S-19500/254A(EL)
6 February 1968
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN
Inactive for new design after 7 June 1999.
This specification is approved for use by all Departments and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, semiconductor diodes for use particularly as high-voltage rectifier devices in compatible equipment circuits. One level of product assurance is provided for each device as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1.
* 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
Type |
Vr |
VR TA = +125°C |
VR TC = +100°C |
IO TC = +100°C |
lf(surge) 1/120 sec |
TJ and TSTG |
Barometric pressure (1) |
|
1N1147 1N1149 |
kV dc 14.4 19.2 |
kV dc 12 16 |
kV ac(rms) 8.4 11.2 |
mA dc 45 45 |
A 10 10 |
-65° to +150°C -65° to +150°C |
ft 40,000 30,000 |
(1) Operating altitude (barometric pressure) maximum, without derating. For higher altitude, derate maximum permissible peak reverse voltage in accordance with figure 2 herein.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
AMSC N/A FSC 5961
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