MIL-S-19500-254 Semiconductor Device, Diode, Silicon, Types 1N1147 And 1N1149, JanThis specification covers the performance requirements for silicon, semiconductor diodes for use particularly as high-voltage rectifier devices in compatible equipment circuits. One level of product assurance is provided for each device as specified in MIL-PRF-19500.

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MIL-S-19500/254B

* TABLE II. Group E inspection for (all quality levels) for qualification or re-qualification only.

Inspection

MIL-STD-750

Sampling plan

Method

Conditions

Subgroup 1

Temperature cycling

Electrical measurements

Subgroup 2

Steady-state operating life

1N1147

1N1149

Electrical measurements

Subgroup 4

Thermal impedance curves

Subgroup 5

Barometric pressure

1N1147

1N1149

Subgroup 6

ESD

1051

1026

1001

1020

500 cycles

See table I, subgroup 2

TC = +100°C, I0 = 45 mA dc, f = 60 Hz

VR = 8.4 kV VR = 11.2 kV

See table I, subgroup 2

Each supplier shall submit their qual-lot average and design maximum thermal impedance curves. In addition, the optimal test conditions and ZeJX limit shall be provided to the qualifying activity in the qualification report.

Pressure = 140 mmHg

Pressure = 225 mmHg

12 devices c = 0

15 devices c = 0

3 devices