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MIL-S-19500-254 Semiconductor Device, Diode, Silicon, Types 1N1147 And 1N1149, JanThis specification covers the performance requirements for silicon, semiconductor diodes for use particularly as high-voltage rectifier devices in compatible equipment circuits. One level of product assurance is provided for each device as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8


MIL-S-19500/2548

*  TA8LE I.  Group A inspection.



Inspection  1/


MIL-STD-750


Symbol


Limits


Unit


Method


Conditions


Min


Max

Subgroup I Visual and mechanical

inspection


Subgroup 2


Forward voltage


Reverse current leakage

1N1147

1N1149


Subgroup 3


High temperature operation:


Reverse current leakage

1N1147

1N1149


Subgroups 4, 5, 6, and 7


Not applicable


2071


4011


4016


4016


IF = 0.3 A dc


VR = 14.4 kV dc

VR = 19.2 kV dc

TA = +125°C VR = 12 kV dc

VR = 16 kV dc


VF1


IR1


IR2


45


100


100


V dc


µA dc


µA dc


1/  For sampling plan, see MIL-PRF-19500.


5




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