The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 8 November 2011.
MIL-PRF-19500/108L
8 August 2011
SUPERSEDING
MIL-PRF-19500/108K
4 December 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON,
TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNPN silicon power, reverse-blocking
triode thyristors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-208 stud, formerly TO-48).
1.3 Maximum ratings. TA = 25°C unless otherwise stated.
IO (1)
ITSM (2)
VGM
TJ
TSTG
di/dt
t = 7 ms
(repetitive)
°C
°C
A/µs
A
A
V (pk)
Min
-65
-65
5
Max
16
150
5
+125
+150
(1) This average forward current is for a maximum case temperature of +65°C, and 180 electrical degrees of
conduction.
(2) Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge
current must not exceed 100 amperes during the first 10 µs after switching from the off (blocking) state to
the on (conducting) state. This time is measured from the point where the thyristor voltage has decayed to
90 percent of its initial blocking value.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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