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MIL-PRF-19500-108 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N682, 2N683, 2N685 Through 2N692, 2N692A, 2N5206, Jan And JantxThis specification covers the performance requirements for PNPN silicon power, reverse-blocking triode thyristors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/108L
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
Reverse blocking current
4211
AC method, bias condition D;
IRRM1
2
mA (pk)
f = 60 Hz, VRRM = rated (see 1.4.1)
IDRM1
2
mA (pk)
Forward blocking current
4206
AC method, bias condition D;
f = 60 Hz; VDRM = rated (see 1.4.1)
V2 = VD = 6 V dc; RL = 50 Ω;
Gate trigger voltage and
4221
VGT1
3
V dc
Re = 20 Ω maximum
current
IGT1
35
mA dc
Forward on voltage
4226
ITM = 50 A(pk) (pulse);
VTM
2
V (pk)
pulse width = 8.5 ms; maximum;
duty cycle = 2 percent maximum
IH
50
mA dc
Holding current
4201
Bias condition D; VAA = 24 V dc
maximum; ITM = IF1 = 1 A dc; IT = IF2 =
100 mA dc; trigger voltage source = 10 V;
trigger PW = 100 µs (minimum); R2 = 20 Ω
Reverse gate current
4219
VG = 5 V dc
IG
250
mA dc
Subgroup 3
TC = +120°C minimum
High temperature
operation:
Reverse blocking current
4211
AC method, bias condition D;
f = 60 Hz; VRRM = rated (see 1.4.1)
IRRM2
5
mA (pk)
AC method, bias condition D;
Forward blocking current
4206
f = 60 Hz; VDRM = rated (see 1.4.1)
IDRM2
5
mA (pk)
See footnote at end of table.
7



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