MIL-PRF-19500/108L
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 7
Bias condition D; TC = +120°C minimum, dv/dt =
4231
VD
V dc
Exponential rate of
voltage rise
25 v/µs; repetition rate = 60 pps; test duration = 15 s;
C = 1.0 µF; RL = 50 Ω
2N682
VAA = 50 V dc
47
2N683
95
VAA = 100 V dc
2N685
190
VAA = 200 V dc
2N686
240
VAA = 250 V dc
2N687
285
VAA = 300 V dc
2N688
380
VAA = 400 V dc
2N689
475
VAA = 500 V dc
2N690
570
VAA = 600 V dc
2N691
665
VAA = 700 V dc
2N692
760
VAA = 800 V dc
2N692A
760
VAA = 800 V dc
2N5206
950
VAA = 1,000 V dc
TC = +120°C minimum; ITM = 10 A; ton = 100 ±50 µs;
Circuit-commutated
4224
tOFF
turn-off time
di/dt = 5 A/µs minimum; di/dt = 8 A/µs maximum;
reverse voltage at t1 = 15 V minimum; repetition rate = 60
pps maximum; di/dt = 20 V/µs; gate bias conditions;
gate source voltage = 0 V; gate source resistance = 100 Ω
µs
30
VDM = VDRM = 50 V (pk); VRRM = 50 V maximum
2N682
µs
30
VDM = VDRM = 100 V (pk); VRRM = 100 V maximum
2N683
µs
30
VDM = VDRM = 200 V (pk); VRRM = 200 V maximum
2N685
µs
30
VDM = VDRM = 250 V (pk); VRRM = 250 V maximum
2N686
µs
30
VDM = VDRM = 300 V (pk); VRRM = 300 V maximum
2N687
µs
30
VDM = VDRM = 400 V (pk); VRRM = 400 V maximum
2N688
µs
40
VDM = VDRM = 500 V (pk); VRRM = 500 V maximum
2N689
µs
40
VDM = VDRM = 600 V (pk); VRRM = 600 V maximum
2N690
µs
60
VDM = VDRM = 700 V (pk); VRRM = 700 V maximum
2N691
µs
60
VDM = VDRM = 800 V (pk); VRRM = 800 V maximum
2N692
µs
60
VDM = VDRM = 800 V (pk); VRRM = 800 V maximum
2N692A
µs
60
VDM = VDRM = 1,000 V (pk); VRRM = 1,000 V maximum
2N5206
4223
Gate controlled
turn-on time
VAA = 50 V dc for 2N682, 100 V dc for 2N683 and 2N685
µs
5
2N682, 2N683, 2N685
ton
through 2N692 and
through 2N692 and 2N5206; ITM = 10 A dc;
VGG = 10 V dc; Re = 25Ω; tp1 = 15 ±5 µs;
2N5206
4 A/µs ≤ di/dt ≤ 200 A/µs.
µs
.5
2N692A
1/ For sampling plan, see MIL-PRF-19500.
9
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