MIL-PRF-19500-108 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N682, 2N683, 2N685 Through 2N692, 2N692A, 2N5206, Jan And JantxThis specification covers the performance requirements for PNPN silicon power, reverse-blocking triode thyristors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/108L

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

* 4.3 Screening (JANTX level). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500,

and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that

exceed the limits of table I herein shall not be acceptable.

Measurement

Screen (see table E-

JANTX level

Method 1051 of MIL-STD-750, condition F, 20 cycles.

Not required

IRRM1, IDRM1, VGT1, VTM, and IGT1

Method 1040 of MIL-STD-750, condition A, TC = +125�C minimum, RGK ≥ 1K Ω;

VDRM, VRRM = rated (see 1.4.1); .25 A or .125 A fuse may be used in accordance

with method 1040 of MIL-STD-750.

Subgroup 2 of table I herein,

ĆIRRM1 = 100 percent of initial value or +0.4 mA (pk), whichever is greater.

ĆIDRM1 = 100 percent of initial value or +0.4 mA (pk), whichever is greater.