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MIL-PRF-19500-108 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N682, 2N683, 2N685 Through 2N692, 2N692A, 2N5206, Jan And JantxThis specification covers the performance requirements for PNPN silicon power, reverse-blocking triode thyristors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/108L
TABLE II. Groups A, B, and C electrical end-point inspection measurements. 1/ 2/
Step
Inspection
Symbol
Limits
Unit
Method
Conditions
Min
Max
IRRM1
1.
Reverse blocking
4211
AC method, bias condition D;
2
mA (pk)
f = 60 Hz; VRRM = rated
cutoff current
IDRM1
2.
Forward blocking
4206
AC method, bias condition D;
2
mA (pk)
f = 60 Hz; VDMR = rated
current
IRRM2
3.
Reverse blocking
4211
AC method, bias condition D;
5
mA (pk)
TC = +120°C minimum; f = 60
cutoff current
Hz; VRRM = rated
IDRM2
4.
Forward blocking
4206
AC method, bias condition D;
5
mA (pk)
TC = +120°C minimum; f = 60
current
Hz; VDMR = rated
VGT1
V2 = VD = 6 V dc;
5.
Gate-trigger voltage
4221
3
V dc
RL = 50 Ω; Re = 20 Ω maximum
and current
35
mA dc
IGT1
ITM = 50 A (pk) (pulse);
VTM
6.
Forward on voltage
2.0
V (pk)
4226
transfer ratio
pulse width = 8.5 ms maximum;
duty cycle = 2 percent maximum
1/ The electrical measurements for table E-VIB (JAN and JANTX) of MIL-PRF-19500 are as follows: Subgroups 2, 3,
and 6, see table II herein, steps 1, 2, 3, 4, 5, and 6.
2/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroups 2, 3, and 6, see table II
herein, steps 1, 2, 3, 4, 5, and 6.
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