MIL-PRF-19500-127 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4370A 1 Through 1N4372A-1 And 1N746A-1 Through 1N759A-1, 1N4370Aur-1 Through 1N4372Aur-1 And 1N746Aur-1 Through 1N759Aur-1, 1N4370C-1 Through 1N4372C-1 And 1N746C-1 Through 1N759C-1, 1N4370Cur-1 Through 1N4372Cur 1 And 1N746Cur-1 Through 1N759Cur-1, 1N4370D-1 Through 1N4372D-1 And 1N746D-1 Through 1N759D-...This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance is provided for each unencapsulated device.

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MIL-PRF-19500/127W

4.5.4 Temperature coefficient of regulator voltage (VZ ). The device shall be temperature stabilized with current

applied prior to reading regulator voltage at the specified ambient temperature as specified in 4.4.3 herein, group C,

subgroup 8.

4.5.5 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each

DUT still sees at least the IZ(minimum) described in 4.3.2 and that the minimum applied voltage, where applicable, is

maintained throughout the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ.