MIL-PRF-19500-157 Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941Bur-1, 1N943Bur-1, 1N944Bur-1, 1N945Bur-1, And 1N946Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, And HThis specification covers the performance requirements for 11.70 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/157T

Dimensions

Symbol

Inches

Millimeters

Min

Max

Min

Max

.063

.067

1.60

1.70

ECT

.016

.022

0.41

0.56

.130

.146

3.30

3.70

.001 min

0.03 min

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

FIGURE 2. Physical dimensions, 1N941BUR-1, 1N943BUR-1 through 1N946BUR-1 (DO-213AA).