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MIL-PRF-19500-157 Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941Bur-1, 1N943Bur-1, 1N944Bur-1, 1N945Bur-1, And 1N946Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, And HThis specification covers the performance requirements for 11.70 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/157T
TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
IZ = 7.5 0.01 mA dc (see 4.5.3)
Reference voltage
4022
VZ
11.12
12.28
V dc
IZ = 7.5 0.1 mA dc, Isig = 0.75 mA ac
ZZ
30
ohms
Small-signal breakdown
4051
impedance
Subgroup 3
VZ
IZ = 7.5 0.01 mA dc, at TA = -55C,
Voltage-temperature
stability
0C, +25C, +75C, +150C 2C
(see 4.5.1 and 4.5.3)
1N941B-1,
239.0
mV dc
1N941BUR-1
1N943B-1,
47.0
mV dc
1N943BUR-1
1N944B-1,
24.0
mV dc
1N944BUR-1
1N945B-1,
12.0
mV dc
1N945BUR-1
1N946B-1,
4.7
mV dc
1N946BUR-1
Subgroups 4, 5, and 6
Not applicable
Subgroup 7
A
Reverse current
4016
DC method; VR = 8.0 V dc.
15
IR
leakage
1/ For sampling plan, see MIL-PRF-19500.
9



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